HIGH EFFICIENCY GAN HEMT DOHERTY POWER AMPLIFIER FOR 5G WIRELESS COMMUNICATION SYSTEMS
This paper proposes a high efficiency Doherty Power Amplifier for 5G wireless communication systems. The power amplifier (PA) was designed based on WIN NP2500 GaN HEMT biased with drain supply voltage of 28 V at quiescent drain-to-source (IDSq) of 13mA for the main transistor and 3mA for the auxiliary transistor res…