INVESTIGATION OF THE CUT-OFF FREQUENCY OF 500µm MMIC GAN HEMT DEVICE AT 10V, 16V AND 20V DRAIN VOLTAGES FROM 1-25 GHz
This paper presents an investigation of the cut-off frequency of 500 µm (4 x 125 µm) monolithic microwave integrated circuit (MMIC) gallium nitride high electron mobility transistor (GaN HEMT) device at 10V, 16V and 20V drain voltages from 1 to 25 GHz. The GaN HEMT device was fabricated by WIN Semiconductor using NP…